XIAN XIWUER ELECTRONIC AND INFO. CO., LTD
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| No. | Specification | Dissipation | Withstanding Voltage | Insulation Resistance | Dimensions (mm) |
|---|---|---|---|---|---|
| 1 | 20kV-2000pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:45 | H:19 | L:23 | D:12 | M:5 |
| 2 | 20kV-10000pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:65 | H:15 | L:19 | D:12 | M:5 |
| 3 | 20kV-18000pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:80 | H:17 | L:25 | D:12 | M:5 |
| 4 | 30kV-1000pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:45 | H:24 | L:32 | D:12 | M:4 |
| 5 | 30kV-2700pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:60 | H:20 | L:28 | D:12 | M:4 |
| 6 | 30kV-12000pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:45 | H:19 | L:23 | D:12 | M:5 |
| 7 | 40kV-150pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:74 | H:18 | L:26 | D:12 | M:5 |
| 8 | 40kV-500pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:28 | H:33 | L:41 | D:8 | M:4 |
| 9 | 40kV-7500pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:80 | H:24 | L:29 | D:12 | M:6 |
| 10 | 40kV-10000pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:80 | H:22 | L:26 | D:16 | M:5 |
Harnessing Plasma: Providing Stable High Voltage for Plasma-Enhanced Chemical Vapor Deposition (PECVD) Equipment
In the semiconductor, photovoltaic, and optical coating industries, PECVD technology deposits high-quality thin films on substrates at low temperatures by igniting a plasma within a vacuum chamber. The core of this process lies in generating and maintaining a stable, uniform plasma, whose stability is directly determined by the performance of the radio frequency (RF) power supply. High-voltage doorknob capacitors are crucial for efficient energy transfer within the RF power supply's matching network.
Challenges: Impedance Matching and Power Stability
The RF power supply must efficiently couple maximum power to the dynamically changing plasma load through the matching network. Capacitors in the matching network face the following challenges:
High RF power and voltage: They must withstand the electrical stresses of high frequency and high voltage.
Heat accumulation: Dielectric and electrode losses caused by RF currents cause capacitor heating.
Long-term stability requirements: Any drift in capacitance value will cause mismatching, reduce deposition rate, and affect film quality.
Solution: High-Q, Low-ESR Doorknob Capacitors
Our high-voltage doorknob capacitors, with their high Q (low loss tangent) and extremely low equivalent series resistance (ESR), are ideal for matching networks in PECVD equipment:
Efficient Power Transfer: Low ESR means minimal heat generation when passing high RF currents, enabling higher power density and transmission efficiency.
Excellent Thermal Stability: Utilizing a temperature-compensated ceramic dielectric, the capacitance value exhibits minimal temperature variation, ensuring stable matching networks over long periods of operation and reducing tuning times.
High Reliability: Rugged construction and high-quality materials ensure long life under demanding RF power conditions, reducing equipment maintenance downtime.
Core Value for Customers:
Improved Film Quality and Consistency: Stable capacitance ensures consistently perfect impedance matching, resulting in uniform and highly reproducible film products.
Increased Productivity and Yield: Reduced process interruptions and substrate scrap caused by mismatching, improving overall equipment efficiency.
Reduced Operating Costs: The capacitors' high efficiency and long life directly reduce system energy consumption and maintenance costs.
Let our high-voltage doorknob capacitors act as the "impedance harmonizer" for your PECVD equipment, helping you deposit perfect layers at every atomic level.